The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Oct. 30, 2014
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Uwe Wahl, Munich, DE;
Armin Willmeroth, Augsburg, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01); H02M 1/08 (2006.01); H02M 1/42 (2007.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/408 (2013.01); H01L 27/088 (2013.01); H02M 1/08 (2013.01); H02M 1/4225 (2013.01); H02M 3/335 (2013.01);
Abstract
The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer layer on the substrate, a compensation area which includes a p-region and a n-region on the buffer layer, and a transistor cell on the compensation area. The transistor cell includes a source region, a body region, a gate electrode and a gate dielectric formed at least between the gate electrode and the body region. The gate dielectric has a thickness in a range of 12 nm to 50 nm.