The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Oct. 24, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/0607 (2013.01); H01L 29/1029 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract
Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.