The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Dec. 03, 2014
Applicant:
Fujitsu Limited, Kanagawa, JP;
Inventor:
Yuichi Minoura, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/66 (2006.01); H01L 21/74 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/743 (2013.01); H01L 29/0623 (2013.01); H01L 29/0661 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/41741 (2013.01); H01L 29/7787 (2013.01);
Abstract
A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made of a conductive material, disposed in the substrate opening so as to be connected to the local p-type region.