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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9306026 B1

PDFFull Text
Date of Patent:
Apr. 05, 2016

Filed:

Feb. 24, 2015

Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same

Applicant:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Inventors:

Akira Toriumi, Tokyo, JP;

Toshiyuki Tabata, Tokyo, JP;

Assignee:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Attorney:

Amster, Rothstein & Ebenstein, LLP

Primary Examiner:

Kyoung Lee

Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/16 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01L 21/02337 (2013.01); H01L 21/28255 (2013.01); H01L 21/3105 (2013.01); H01L 29/16 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor structure includes: a germanium layer; and an aluminum oxynitride filmthat is formed on the germanium layer, wherein: an EOT of the aluminum oxynitride film is 2 nm or less; Cit/Cacc is 0.4 or less; on a presumption that Au acting as a metal film is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V; and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region.

Find Patent Forward Citations

Toriumi, Akira. (2016). Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same (U.S. Patent No. 9306026). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9306026

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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