The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
May. 17, 2012
Léon C. M. Van Den Oever, Rosmalen, NL;
Ray J. E. Hueting, Hengelo, NL;
Léon C. M. van den Oever, Rosmalen, NL;
Ray J. E. Hueting, Hengelo, NL;
EPCOS AG, Munich, DE;
Abstract
A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an emitter contact on the donor layer, and a collector terminal forms a collector contact on the donor layer. A base terminal is electrically conductively connected with the high-mobility layer. The transistor can be produced in a HEMT technology or BiFET technology in GaAs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile