The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Dec. 09, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Suk-Kyun Lee, Yongin-si, KR;
Chan-Ho Park, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 29/66727 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 21/26586 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/456 (2013.01);
Abstract
A semiconductor device includes a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns. The source pattern includes: grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer between the cell trench patterns, source regions at the inclined sidewalls of the grooves, source isolation regions at the bottoms of the grooves, and a source electrode at interior regions of the grooves and that has a planar upper surface.