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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9305942 B1

PDFFull Text
Date of Patent:
Apr. 05, 2016

Filed:

Sep. 21, 2012

Tft array substrate having metal oxide part and method for manufacturing the same and display device

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xiang Liu, Beijing, CN;

Jianshe Xue, Beijing, CN;

Assignee:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

Ladas & Parry LLP

Primary Examiner:

Lauren Nguyen

Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 27/112 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/04 (2006.01); H01L 21/48 (2006.01); H01L 27/115 (2006.01); H01L 29/45 (2006.01); H01L 21/44 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1362 (2013.01); G02F 1/136286 (2013.01); H01L 21/44 (2013.01); H01L 21/4885 (2013.01); H01L 27/1259 (2013.01); H01L 27/1288 (2013.01); H01L 27/156 (2013.01); H01L 29/41733 (2013.01); H01L 29/458 (2013.01); H01L 29/66765 (2013.01); G02F 2001/136218 (2013.01); G02F 2001/136236 (2013.01);
Abstract

Embodiments of the present invention provide a TFT array substrate and a method for manufacturing the same and a display device. The TFT array substrate comprises: a base substrate; gate lines, gate electrodes, a gate insulating layer and a semiconductor active layer formed on the base substrate; a metal barrier layer formed on the semiconductor active layer, the metal barrier layer covering the semiconductor active layer; source electrodes and drain electrodes formed on the metal barrier layer, with a metal oxide part being formed between the source electrode and the drain electrode to insulate the source electrode and the drain electrode from each other; and a protection layer formed on the gate insulating layer and the source and drain electrodes, wherein the metal oxide part is formed by oxidizing a part of the metal barrier layer located between the source electrode and the drain electrode.

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