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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9305940 B1

PDFFull Text
Date of Patent:
Apr. 05, 2016

Filed:

Aug. 19, 2014

Thin film transistor having an active pattern and a source metal pattern with taper angles

Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Bong-Kyun Kim, Hwaseong-si, KR;

Young-Min Moon, Seongnam-si, KR;

Assignee:

Samsung Display Co., Ltd., , KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Long K Tran

Assistant Examiner:

Dzung Tran

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/04 (2006.01); H01L 29/12 (2006.01); H01L 21/00 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 21/441 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/32134 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 21/76846 (2013.01); H01L 27/1259 (2013.01); H01L 29/41733 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01);
Abstract

A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.

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