The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Nov. 11, 2010
Applicant:
Franz Unterleitner, Kalsdorf, AT;
Inventor:
Franz Unterleitner, Kalsdorf, AT;
Assignee:
ams AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 29/0688 (2013.01); H01L 29/1095 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H02H 9/044 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01);
Abstract
In the high-voltage transistor, which is suitable for an ESD-protection circuit, there is no doped well or at most a portion of a second well () of a second conductivity type opposite a first conductivity type under a contact region () for the drain between a first well () and a semiconductor material of the substrate (), said semiconductor material being undoped or being doped for the first conductivity type. Said portion has a lower thickness than a thickness which would provide a good insulation of the first well from the substrate and which would provide a high-breakdown voltage.