The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Apr. 09, 2011
Applicants:

Satya V. Nitta, Armonk, NY (US);

Shom Ponoth, Armonk, NY (US);

Inventors:

Satya V. Nitta, Armonk, NY (US);

Shom Ponoth, Armonk, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/7682 (2013.01); H01L 21/76808 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 23/48 (2013.01); H01L 23/481 (2013.01); H01L 23/52 (2013.01); H01L 23/522 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure.


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