The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Mar. 07, 2013
Applicants:
Sughyun Sung, Yongin-si, KR;
Myeongcheol Kim, Suwon-si, KR;
Myung-hoon Jung, Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 27/11 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 21/76897 (2013.01); H01L 27/1104 (2013.01);
Abstract
A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern.