The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jun. 30, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Andy Chih-Hung Wei, Queensbury, NY (US);
Guillaume Bouche, Albany, NY (US);
Gabriel Padron Wells, Saratoga Springs, NY (US);
Xiang Hu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 23/535 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); H01L 21/76224 (2013.01); H01L 21/845 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Embodiments of the present invention provide an improved structure and method of contact formation. A cap nitride is removed from a gate in a region that is distanced from a fin. This facilitates reduced process steps, allowing the gate and the source/drain regions to be opened in the same process step. Extreme Ultraviolet Lithography (EUVL) may be used to pattern the resist to form the contacts.