The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Aug. 11, 2009
Daniel N. Carothers, Oro Valley, AZ (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
VU A. VU, Falls Church, VA (US);
Daniel N. Carothers, Oro Valley, AZ (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
Vu A. Vu, Falls Church, VA (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Abstract
A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed layer to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.