The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Dec. 09, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Kensaku Motoki, Itami, JP;
Masaki Ueno, Itami, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 25/00 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); C30B 33/00 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02576 (2013.01); C23C 16/303 (2013.01); C30B 23/00 (2013.01); C30B 23/02 (2013.01); C30B 25/00 (2013.01); C30B 25/02 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 33/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02573 (2013.01); H01L 21/02609 (2013.01); H01L 21/02645 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01);
Abstract
Disclosed is a gallium nitride crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured by SIMS, and other regions of lower oxygen concentrations measured by SIMS. The top surface is a C-plane surface. The ratio of the highest oxygen concentration to the lowest oxygen concentration is equal to or more than fifty.