The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
May. 30, 2013
Renesas Electronics Corporation, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A resistance change memory has a resistance change device and a control circuit for controlling application of voltage to the resistance change device. The resistance change device has a first electrode, a second electrode, and a resistance change layer interposed between the first electrode and the second electrode. A material for the second electrode includes one of members selected from the group consisting of W, Ti, Ta, and nitrides thereof. During forming of the resistance change device, the control circuit performs a second forming treatment succeeding to a first forming treatment. The first forming treatment includes application of voltage such that the potential of the first electrode is higher than the potential of the second electrode. The second forming treatment includes application of voltage such that the potential of the second electrode is higher than the potential of the first electrode.