The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Jun. 20, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Edgar R. Cordero, Round Rock, TX (US);

Carlos A. Fernandez, Hialeah, FL (US);

Joab D. Henderson, Pflugerville, TX (US);

Jeffrey A. Sabrowski, Leander, TX (US);

Anuwat Saetow, Austin, TX (US);

Saravanan Sethuraman, Bangalore, IN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G11C 7/10 (2006.01); G11C 8/16 (2006.01); G06F 11/10 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1075 (2013.01); G06F 11/1048 (2013.01); G11C 7/1045 (2013.01); G11C 8/16 (2013.01); G11C 2029/0411 (2013.01); G11C 2207/2209 (2013.01);
Abstract

A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.


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