The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Nov. 06, 2013
Applicant:
X-fab Semiconductor Foundries Ag, Erfurt, DE;
Inventors:
Sang Sool Koo, Sarawak, MY;
Ling Gang Fang, Sarawak, MY;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01);
Abstract
A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilizing CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor.