The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Sep. 19, 2012
Applicant:

3m Innovative Properties Company, St. Paul, MN (US);

Inventors:

Jeffrey H. Tokie, Scandia, MN (US);

Joseph W. Woody, V, St. Paul, MN (US);

Thomas M. Lynch, Woodbury, MN (US);

Daniel M. Lentz, Woodbury, MN (US);

Robert S. Davidson, Bloomington, MN (US);

Cristin E. Moran, St. Paul, MN (US);

Lijun Zu, Woodbury, MN (US);

Assignee:

3M INNOVATIVE PROPERTIES COMPANY, Saint Paul, MN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05K 3/06 (2006.01); C23F 1/00 (2006.01); C02F 1/10 (2006.01); C23F 1/02 (2006.01); C23F 1/08 (2006.01); C23F 1/30 (2006.01); C23F 1/46 (2006.01);
U.S. Cl.
CPC ...
H05K 3/06 (2013.01); C02F 1/10 (2013.01); C23F 1/00 (2013.01); C23F 1/02 (2013.01); C23F 1/08 (2013.01); C23F 1/30 (2013.01); C23F 1/46 (2013.01); H05K 3/068 (2013.01); H05K 2203/1545 (2013.01);
Abstract

Metalized web substrate is wet etched in a reaction vessel by contacting with oxidizing and metal complexing agent to remove metal from unpatterned region. Following etching, substrate is rinsed, and rinse is at least partly recycled. Concentrations of oxidizing and metal complexing agents in the etchant bath are maintained by delivering replenishment feeds of each. Concentration of metal in the etchant bath is maintained by discharging some of the etchant bath. Replenishment rates of oxidizing and metal complexing agents and etchant removal rate are determined based at least in part on rate that metal etched from the substrate enters the etchant bath.


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