The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Jul. 22, 2014
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Yashar Rajavi, Mountain View, CA (US);

Amirpouya Kavousian, San Jose, CA (US);

Alireza Khalili, Sunnyvale, CA (US);

Mohammad Bagher Vahid Far, San Jose, CA (US);

Abbas Komijani, Mountain View, CA (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 5/32 (2006.01); H03B 5/36 (2006.01);
U.S. Cl.
CPC ...
H03B 5/364 (2013.01); H03B 5/36 (2013.01);
Abstract

A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.


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