The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Feb. 11, 2015
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/50 (2006.01); H01L 27/32 (2006.01); G02F 1/1335 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5275 (2013.01); H01L 27/3248 (2013.01); H01L 51/5012 (2013.01); H01L 51/525 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); H01L 51/5262 (2013.01); H01L 51/5271 (2013.01); G02F 1/133602 (2013.01); H01L 51/0037 (2013.01); H01L 51/0091 (2013.01); H01L 51/5088 (2013.01); H01L 51/5092 (2013.01); H01L 2251/558 (2013.01);
Abstract
To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer () is sandwiched between a transparent electrode () and a cathode (), a film thickness of the EL layer () and a film thickness of the transparent electrode () are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode () and a cover material ().