The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Sep. 24, 2014
Applicant:

Northwestern University, Evanston, IL (US);

Inventors:

Joseph Shimon Friedman, Paris, FR;

Alan V. Sahakian, Northbrook, IL (US);

Assignee:

Northwestern University, Evanston, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 29/82 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H03K 19/18 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/22 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); H03K 19/18 (2013.01);
Abstract

A magnetic tunnel junction (MTJ) device is provided that includes a MTJ element and a control wire. The MTJ element includes a top ferromagnet layer formed of a first magnetic material, a tunneling layer, and a bottom ferromagnet layer formed of a second magnetic material. The tunneling layer is mounted between the top ferromagnet layer and the bottom ferromagnet layer. The control wire is configured to conduct a charge pulse. A direction of charge flow in the control wire extends substantially perpendicular to a magnetization direction of the top ferromagnet layer. The control wire is positioned sufficiently close to the top ferromagnet layer to reverse the magnetization direction of the top ferromagnet layer when the charge pulse flows therethrough while not reversing the magnetization direction of the bottom ferromagnet layer when the charge pulse flows therethrough.


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