The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Feb. 06, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hiroshi Katsuno, Tokyo, JP;

Satoshi Mitsugi, Kanagawa-ken, JP;

Toshihide Ito, Tokyo, JP;

Shinya Nunoue, Chiba-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/38 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a metal layer, a stacked structural body, a first electrode, a pad electrode, a first conductive layer, a second conductive layer and an insulating layer. The metal layer includes a major surface having a first region, a second region, a third region and a fourth region. The stacked structural body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer includes a first portion and a second portion. The second semiconductor layer is provided between the first region and the first portion. The first electrode is provided between the second region and the second portion. The pad electrode is provided on the third region. The first conductive layer is provided between the second region and the first electrode and between the third region and the pad electrode.


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