The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Nov. 30, 2011
Noriyuki Aihara, Chichibu, JP;
Noriyuki Aihara, Chichibu, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InGa)As (0≦X1≦1) and a barrier layer made of a compound semiconductor having a composition formula (AlGa)As (0≦X2≦1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device. The first and second clad layers are made of a compound semiconductor having a composition formula (AlGa)InP (0≦X3≦1, 0<Y1≦1), and when a single well layer and a single barrier layer form a single paired layer, the number of paired layers is equal to or smaller than 5.