The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Oct. 10, 2013
Applicant:

Aledia, Grenoble, FR;

Inventor:

Carlo Cagli, Grenoble, FR;

Assignee:

ALEDIA, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/18 (2010.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/18 (2013.01); H01L 21/02603 (2013.01); H01L 29/0669 (2013.01); H01L 33/24 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided.


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