The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Feb. 23, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
Kabishiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0025 (2013.01); H01L 33/0079 (2013.01); H01L 33/10 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01);
Abstract
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.