The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Mar. 19, 2015
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Toru Takayama, Atsugi, JP;

Junya Maruyama, Ebina, JP;

Yuugo Goto, Atsugi, JP;

Yumiko Ohno, Atsugi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 33/00 (2010.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 21/425 (2006.01); H01L 21/70 (2006.01); H01L 21/8234 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); H01L 21/02175 (2013.01); H01L 21/28008 (2013.01); H01L 21/324 (2013.01); H01L 21/425 (2013.01); H01L 21/707 (2013.01); H01L 21/823487 (2013.01); H01L 27/1214 (2013.01); H01L 27/1266 (2013.01); H01L 27/156 (2013.01); H01L 27/3244 (2013.01); H01L 29/78603 (2013.01); H01L 33/0054 (2013.01); H01L 51/003 (2013.01); H01L 51/56 (2013.01); H01L 2221/68368 (2013.01); H01L 2227/326 (2013.01); H01L 2933/0016 (2013.01);
Abstract

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.


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