The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Aug. 21, 2014
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics SA, Montrouge, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Michel Marty, Saint Paul d Varces, FR;
Laurent Frey, Grenoble, FR;
Sebastien Jouan, Crolles, FR;
Salim Boutami, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS; STMicroelectronics SA, Crolles, Montrouge, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).