The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 07, 2009
Applicants:
Hoi Sing Kwok, Hong Kong, CN;
Zhiguo Meng, Hong Kong, CN;
Man Wong, Hong Kong, CN;
Inventors:
Assignee:
The Hong Kong University of Science and Technology, Hong Kong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/076 (2012.01); H01L 31/028 (2006.01); H01L 31/0368 (2006.01); H01L 31/077 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0236 (2013.01); H01L 31/028 (2013.01); H01L 31/03682 (2013.01); H01L 31/076 (2013.01); H01L 31/077 (2013.01); H01L 31/182 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light.