The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

May. 28, 2010
Applicants:

Arvind Kamath, Mountain View, CA (US);

Michael Kocsis, San Francisco, CA (US);

Kevin Mccarthy, Milpitas, CA (US);

Gloria Man Ting Wong, Mountain View, CA (US);

Inventors:

Arvind Kamath, Mountain View, CA (US);

Michael Kocsis, San Francisco, CA (US);

Kevin McCarthy, Milpitas, CA (US);

Gloria Man Ting Wong, Mountain View, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 27/1218 (2013.01); H01L 29/7869 (2013.01); H01L 29/78681 (2013.01);
Abstract

Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.


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