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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9299834 B1

PDFFull Text
Date of Patent:
Mar. 29, 2016

Filed:

Jul. 01, 2013

Trench connection between a transistor and a further component

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Zundel, Egmating, DE;

Franz Hirler, Isen, DE;

Norbert Krischke, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Maginot, Moore & Beck LLP

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 21/74 (2006.01); H01L 27/07 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/743 (2013.01); H01L 27/0733 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/66734 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01L 29/7809 (2013.01); H01L 29/7813 (2013.01); H01L 29/7816 (2013.01); H01L 29/945 (2013.01); H01L 28/40 (2013.01); H01L 29/0696 (2013.01);
Abstract

A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.

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Zundel, Markus. (2016). Trench connection between a transistor and a further component (U.S. Patent No. 9299834). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9299834

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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