The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Mar. 11, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Hauk Han, Hwaseong-si, KR;
Il-Woo Kim, Incheon, KR;
Jeong-Gil Lee, Hwaseong-si, KR;
Yong-Il Kwon, Incheon, KR;
Myoung-Bum Lee, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 27/11529 (2013.01); H01L 29/66825 (2013.01);
Abstract
A memory device includes a gate structure, a contact plug, and a spacer. The gate structure includes first and second conductive layer patterns sequentially stacked on a substrate. The contact plug passes through the second conductive layer pattern, and a sidewall of the contact plug directly contacts at least a portion of the second conductive layer pattern. The spacer surrounds a portion of the sidewall of the contact plug and contacting the gate structure.