The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Oct. 10, 2013
Applicant:
Sumitomo Metal Mining Co., Ltd., Tokyo, JP;
Inventor:
Tokuyuki Nakayama, Tokyo, JP;
Assignee:
SUMITOMO METAL MINING CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/04 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract
An oxide crystalline thin film having a comparatively high carrier mobility and suitable as TFT channel layer material is provided. The oxide semiconductor thin film of the present invention comprises an oxide that includes indium and tungsten, with the tungsten content in the W/In atomic ratio being 0.005 to 0.12, is crystalline, comprises only the InOphase of bixbyite structure, and has a carrier density of 1×10cmor less and a carrier mobility of higher than 1 cm/Vsec. The oxide is able to include zinc further with the zinc content in the Z/In atomic ratio of 0.05 or less.