The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Oct. 23, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Woo-young Yang, Hwaseong-si, KR;
Ki-hong Kim, Osan-si, KR;
Sang-jun Choi, Seoul, KR;
Young-eal Kim, Hwaseong-si, KR;
Seong-yong Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.