The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jul. 08, 2011
Applicant:
Shiro Sakai, Tokushima, JP;
Inventor:
Shiro Sakai, Tokushima, JP;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 29/06 (2006.01); H01L 33/22 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0688 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/02658 (2013.01); H01L 21/02664 (2013.01); H01L 33/007 (2013.01); H01L 33/22 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01);
Abstract
Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate.