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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9299711 B1

PDFFull Text
Date of Patent:
Mar. 29, 2016

Filed:

Sep. 20, 2013

Field effect transistors including asymmetrical silicide structures and related devices

Applicants:

Tae Joong Song, Seongnam-si, KR;

Gyu Hong Kim, Seoul, KR;

Jae Ho Park, Suwon-si, KR;

Jong Hoon Jung, Seoul, KR;

Inventors:

Tae Joong Song, Seongnam-si, KR;

Gyu Hong Kim, Seoul, KR;

Jae Ho Park, Suwon-si, KR;

Jong Hoon Jung, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel & Sibley, P.A

Primary Examiner:

Allison P Bernstein

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/11 (2006.01); H01L 29/417 (2006.01); G11C 11/419 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/419 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01); G11C 11/412 (2013.01);
Abstract

A fin Field Effect Transistor (finFET) can include a source region and a drain region of the finFET. A gate of the finFET can cross over a fin of the finFET between the source and drain regions. First and second silicide layers can be on the source and drain regions respectively. The first and second silicide layers can include respective first and second surfaces that face the gate crossing over the fin, where the first and second surfaces are different sizes.

Find Patent Forward Citations

Song, Tae. (2016). Field effect transistors including asymmetrical silicide structures and related devices (U.S. Patent No. 9299711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9299711

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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