Manufacturing method of capacitor lower electrode and semiconductor storage device using the same

Abstract

A manufacturing method of capacitor lower electrode of the instant disclosure comprises the steps of: providing a semiconductor substrate; forming a sacrificial laminate on the semiconductor substrate; forming a plurality of capacitor trenches in the sacrificial laminate; forming a plurality of lower electrode structures in the capacitor trenches respectively; etching back the sacrificial laminate to a desired thickness to expose an upper portion of each of the lower electrode structures; forming a liner layer to conformally cover the sacrificial laminate and the upper portions of the lower electrode structures; patterning the liner layer to form an insulating spacer on the sidewalls of each of the upper portions, wherein two adjacent insulating spacers are configured to have a self-aligned opening positioned therebetween; and performing a wet-etching process to remove the sacrificial laminate through the self-aligned openings.