The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Mar. 28, 2014
Applicant:
Samar Saha, Milpitas, CA (US);
Inventor:
Samar Saha, Milpitas, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/0262 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 29/105 (2013.01); H01L 29/1083 (2013.01);
Abstract
A transistor structure having an epitaxial layer deposited over an implanted substrate in order to reduce process variability. The epitaxial layer is able to be deposited doped, un-doped or lightly doped via up-diffusion from the implanted substrate, and used to form the channel for the transistor structure. As a result, this use of un-doped epitaxial layer provides the benefit of reducing process variability (e.g. random dopant fluctuation) and thus the transistor performance variability despite the small physical size of the transistors.