The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Nov. 27, 2013
Applicant:

Enpirion, Inc., Hampton, NJ (US);

Inventors:

Ashraf W. Lotfi, Bridgewater, NJ (US);

Jeffrey Demski, Orefield, PA (US);

Anatoly Feygenson, Hillsborough, NJ (US);

Douglas Dean Lopata, Boyerstown, PA (US);

Jay Norton, Wind Gap, PA (US);

John D. Weld, Ledgewood, NJ (US);

Assignee:

Enpirion, Inc., Hampton, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 25/00 (2006.01); H01L 27/06 (2006.01); H01L 23/482 (2006.01); H01L 23/36 (2006.01); H01L 23/495 (2006.01); H01L 29/78 (2006.01); H01L 23/31 (2006.01); H01L 23/64 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/8234 (2013.01); H01L 21/823871 (2013.01); H01L 23/36 (2013.01); H01L 23/4824 (2013.01); H01L 23/495 (2013.01); H01L 23/49589 (2013.01); H01L 23/522 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 27/0203 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 29/41758 (2013.01); H01L 29/665 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 21/28518 (2013.01); H01L 21/76801 (2013.01); H01L 21/76895 (2013.01); H01L 23/3107 (2013.01); H01L 23/642 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 29/0847 (2013.01); H01L 29/1045 (2013.01); H01L 29/1083 (2013.01); H01L 29/456 (2013.01); H01L 29/4933 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48647 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/19106 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A semiconductor device and method of forming the same including, in one embodiment, a substrate and a plurality of source and drain regions formed as alternating pattern on the substrate. The semiconductor device also includes a plurality of gates formed over the substrate between and parallel to ones of the plurality of source and drain regions. The semiconductor device also includes a first plurality of alternating source and drain metallic strips formed in a first metallic layer above the substrate and parallel to and forming an electrical contact with respective ones of the plurality of source and drain regions.


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