The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 08, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76808 (2013.01); H01L 21/76838 (2013.01); H01L 21/76877 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device is manufactured by forming a lower structure on a substrate including first and second regions, simultaneously forming a first interconnection on the lower structure of the first region and a first portion of a second interconnection on the lower structure of the second region, forming a first interlayer insulating layer on the first interconnection and on the first portion of the second interconnection, forming a trench exposing a top surface of the first portion of the second interconnection in the first interlayer insulating layer, and forming a second portion of the second interconnection in the trench. Related structures are also disclosed.