The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jul. 05, 2012
Takayoshi Miki, Tokyo, JP;
Yasushi Nakayama, Tokyo, JP;
Takeshi Oi, Tokyo, JP;
Kazuhiro Tada, Tokyo, JP;
Shiori Idaka, Tokyo, JP;
Shigeru Hasegawa, Tokyo, JP;
Tomohiro Kobayashi, Tokyo, JP;
Yukio Nakashima, Tokyo, JP;
Takayoshi Miki, Tokyo, JP;
Yasushi Nakayama, Tokyo, JP;
Takeshi Oi, Tokyo, JP;
Kazuhiro Tada, Tokyo, JP;
Shiori Idaka, Tokyo, JP;
Shigeru Hasegawa, Tokyo, JP;
Tomohiro Kobayashi, Tokyo, JP;
Yukio Nakashima, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.