The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jul. 16, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The present invention improves the performance of a semiconductor device. In a manufacturing method of a semiconductor device, sacrificial oxide films are formed over the side surface of a control gate electrode formed in a memory cell region, the surface of a cap insulating film formed in the memory cell region, and the surface of the part, which remains in a peripheral circuit region, of an insulating film. The step of forming the sacrificial oxide films includes the steps of: oxidizing the side surface of the control gate electrode by a thermal oxidation method; and oxidizing the surface of the cap insulating film and the surface of the part, which remains in the peripheral circuit region, of the insulating film by an ISSG oxidation method.