The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Feb. 03, 2014
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Kiyotaka Mizukami, Kiyosu, JP;
Takahiro Sonoyama, Kiyosu, JP;
Toru Oka, Kiyosu, JP;
Junya Nishii, Kiyosu, JP;
Assignee:
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/2003 (2013.01); H01L 29/4966 (2013.01);
Abstract
A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.