The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Feb. 23, 2012
Applicant:
Tim Boescke, Erfurt, DE;
Inventor:
Tim Boescke, Erfurt, DE;
Assignee:
SolarWorld Industries Thueringen GmbH, Arnstadt, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 31/061 (2012.01);
U.S. Cl.
CPC ...
H01L 21/2254 (2013.01); H01L 31/061 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
In a method for producing a solar cell having a substrate made of crystalline silicon, on a surface of the Si substrate, a locally defined n-doped emitter region is produced by full-surface cold coating of the surface using a P-containing coating, followed by a local laser beam-doping of P atoms from the P-containing coating, and subsequent thermal driving in of the P atoms, starting from the doping-in region.