The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jun. 24, 2014
Applicants:
Imec Vzw, Leuven, BE;
Samsung Electronics Co. Ltd., Gyeonggi-do, KR;
Inventors:
Assignees:
IMEC VZW, Leuven, BE;
Samsung Electronics Co. Ltd., Suwon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/10 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); H01L 21/02587 (2013.01); H01L 21/76224 (2013.01); H01L 29/1054 (2013.01); H01L 21/3065 (2013.01);
Abstract
The present disclosure relates to a method for forming a strained semiconductor structure. The method comprises providing a strain relaxed buffer layer, forming a sacrificial layer on the strain relaxed buffer layer, forming a shallow trench isolation structure through the sacrificial layer, removing at least a portion of an oxide layer on the sacrificial layer, etching through the sacrificial layer such that a portion of the strain relaxed buffer layer is exposed, forming the strained semiconductor structure on the exposed portion of the strain relaxed buffer layer.