The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Apr. 10, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Keon Hun Lee, Seoul, KR;
Min Ho Kim, Hwaseong-si, KR;
Jong Uk Seo, Suwon-si, KR;
Suk Ho Yoon, Seoul, KR;
Kee Won Lee, Suwon-si, KR;
Sang Don Lee, Suwon-si, KR;
Ho Chul Lee, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02576 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/22 (2013.01);
Abstract
A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.