The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jul. 28, 2011
Shinya Morita, Kobe, JP;
Aya Miki, Kobe, JP;
Yumi Iwanari, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Shinya Morita, Kobe, JP;
Aya Miki, Kobe, JP;
Yumi Iwanari, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.