The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jun. 05, 2014
Applicants:
Shuwei Sun, Framingham, MA (US);
Francois-charles Dary, Newton, MA (US);
Marc Abouaf, Harvard, MA (US);
Patrick Hogan, Somerville, MA (US);
Qi Zhang, Wellesley, MA (US);
Inventors:
Shuwei Sun, Framingham, MA (US);
Francois-Charles Dary, Newton, MA (US);
Marc Abouaf, Harvard, MA (US);
Patrick Hogan, Somerville, MA (US);
Qi Zhang, Wellesley, MA (US);
Assignee:
H.C. Starck Inc., Newton, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01B 1/02 (2006.01); H01L 29/66 (2006.01); G06F 3/041 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01B 1/026 (2013.01); G06F 3/041 (2013.01); H01L 29/4908 (2013.01); H01L 29/6675 (2013.01);
Abstract
In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.