The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Dec. 19, 2014
National Tsing Hua University, Hsinchu, TW;
Chien-Fu Chen, Hsinchu, TW;
Meng-Fan Chang, Taichung, TW;
Hiroyuki Yamauchi, Fukuoka, JP;
Yen-Yao Wang, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A 6T static random access memory cell, array, and memory thereof are provided, in which the memory cell includes a first inverter, a second inverter, a first access transistor, and a second access transistor. A first high supply voltage and a low supply voltage are coupled to the first inverter. A second high supply voltage and the low supply voltage are coupled to the second inverter. The first access transistor has a gate terminal coupled to a first word line. The first access transistor has a source terminal coupled to the first node. The second access transistor has a gate terminal coupled to a second word line, and the second access transistor has a source terminal coupled to the second node. The first word line provides ON signals to turn on the first access transistor, and the second high supply voltage provides a first differential voltage simultaneously.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile