The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 08, 2015
Applicant:
Hangzhou Haicun Information Technology Co., Ltd., HangZhou, CN;
Inventor:
Guobiao Zhang, Corvallis, OR (US);
Assignees:
HangZhou HaiCun Informationa Technology Co., Ltd., HangZhou, ZheJiang, CN;
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 7/00 (2006.01); G11C 5/14 (2006.01); G11C 8/14 (2006.01); G11C 13/00 (2006.01); H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
G11C 5/02 (2013.01); G11C 5/14 (2013.01); G11C 5/145 (2013.01); G11C 7/00 (2013.01); G11C 8/14 (2013.01); G11C 13/0002 (2013.01); G11C 2213/71 (2013.01); H01L 23/3121 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/18 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/107 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1064 (2013.01); H01L 2924/16251 (2013.01);
Abstract
The present invention discloses a discrete three-dimensional vertical memory (3D-M). It comprises at least a 3D-array die and at least a voltage-generator die. The 3D-array die comprises a plurality of vertical memory strings. At least a voltage generator for the 3D-array die is located on the voltage-generator die instead of the 3D-array die. The 3D-array die and the voltage-generator die have substantially different back-end-of-line (BEOL) structures.