The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Jul. 24, 2014
Applicants:

Carlos Pina Hernandez, Berkeley, CA (US);

Christophe Peroz, San Francisco, CA (US);

Stefano Cabrini, Albany, CA (US);

Inventors:

Carlos Pina Hernandez, Berkeley, CA (US);

Christophe Peroz, San Francisco, CA (US);

Stefano Cabrini, Albany, CA (US);

Assignee:

Abeam Technologies, Inc., Castro Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/027 (2006.01); G03F 7/028 (2006.01); G03F 7/20 (2006.01); C08L 25/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0275 (2013.01); C08L 25/00 (2013.01); G03F 7/027 (2013.01); G03F 7/028 (2013.01); G03F 7/2002 (2013.01);
Abstract

Provided is a composition for resist patterning comprising a thiol; at least one -ene monomer; at least one polymerization initiator; and, optionally, a metal oxide used in an amount of 0.1 to 50 wt. % per weight of the composition; the thiol and -ene monomer are used in a stoichiometric ratio with a refractive index between 1.6 and 1.8. The composition is used in a patterning process wherein the composition is dispensed to the substrate, is covered with a mask, and is cured, e.g., by UV radiation, at room temperature with light having a wavelength in the range of 200 nm to 450 nm. The process may be carried out with thermal annealing.


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